This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Kyuchul Chong and Memory-Cell Encapsulation
Introduction
Kyuchul Chong is an inventor associated with Rio Rancho, New Mexico, and Intel Corporation. His patent work concerns protective structures for memory cells that use phase-change memory.
Latest Patents
Chong is credited with 1 patent: “Bilayer Encapsulation of a Memory Cell.” The invention describes a memory device with a storage element that includes phase-change memory. A bilayer is formed on two sides of the memory cell, with an inner layer made of a first nitride and an outer layer made of a second nitride.
Career Highlights
Chong’s listed patent reflects work on memory-device design and encapsulation. The bilayer structure described in the patent uses two nitride layers around the memory cell.
Collaborations
Chong’s listed coworkers include Errol Todd Ryan and David M. Fryauf. The available information identifies these colleagues but does not specify their roles in the patent.
Conclusion
Kyuchul Chong’s patent focuses on bilayer encapsulation for a phase-change memory cell, connecting his recorded invention to memory technology at Intel Corporation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile