Company Filing History:
Years Active: 2015-2019
Title: Innovations of Zhengsheng Han
Introduction
Zhengsheng Han is a prominent inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology, particularly in modeling methods for MOS devices. With a total of 5 patents to his name, his work has advanced the understanding and application of device modeling.
Latest Patents
One of his latest patents is the "STI stress effect modeling method and device of an MOS device." This invention discloses a method that introduces the influence of temperature parameters on the STI stress effect of the MOS device. The method involves extracting model parameters at normal temperature and establishing a function that accurately describes the STI stress effect as it changes with temperature. This innovation enhances the reliability of the extracted model parameters.
Another notable patent is the "SOI MOS device modeling method." This method provides a comprehensive model for SOI MOS devices, which have a source-drain injection that does not reach the bottom. It includes the extraction of parameters for various components of the device, improving model precision and aiding in the simulation design of semiconductor devices.
Career Highlights
Zhengsheng Han is affiliated with the Chinese Academy of Sciences, where he conducts research and development in semiconductor technologies. His work has been instrumental in advancing the field and has garnered recognition for its innovative approach to device modeling.
Collaborations
He has collaborated with notable colleagues, including Jiajun Luo and Jianhui Bu, contributing to various research projects and enhancing the collective expertise in their field.
Conclusion
Zhengsheng Han's contributions to semiconductor technology through his innovative patents and research at the Chinese Academy of Sciences highlight his role as a leading inventor in the industry. His work continues to influence the development of more accurate and reliable modeling methods for MOS devices.
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