The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Oct. 25, 2012
Applicant:
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Inventors:
Yinxue Lv, Beijing, CN;
Jinshun Bi, Beijing, CN;
Jiajun Luo, Beijing, CN;
Zhengsheng Han, Beijing, CN;
Tianchun Ye, Beijing, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76243 (2013.01); H01L 21/26533 (2013.01); H01L 21/324 (2013.01); H01L 21/7624 (2013.01);
Abstract
A method for improving anti-radiation performance of SOI structure that includes implementing particle implantations of high-energy neutrons, protons and γ-rays to a buried oxide layer of an SOI structure, and then performing annealing process. The high-energy particle implantation introduces displacement damage to the buried oxide layer of the SOI structure.