Yinxue Lv

Title: Yinxue Lv: Innovator in Anti-Radiation Technology

Introduction

Yinxue Lv is a prominent inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology, particularly in enhancing the anti-radiation performance of silicon-on-insulator (SOI) structures. His innovative approach has garnered attention in both academic and industrial circles.

Latest Patents

Yinxue Lv holds a patent titled "Method for improving anti-radiation performance of SOI structure." This patent describes a method that involves implementing particle implantations of high-energy neutrons, protons, and γ-rays to a buried oxide layer of an SOI structure, followed by an annealing process. The high-energy particle implantation introduces displacement damage to the buried oxide layer, thereby improving its anti-radiation performance. He has 1 patent to his name.

Career Highlights

Yinxue Lv is affiliated with the Chinese Academy of Sciences, where he conducts research and development in advanced materials and semiconductor technologies. His work has been instrumental in pushing the boundaries of what is possible in the field of radiation-resistant materials.

Collaborations

Yinxue has collaborated with notable colleagues, including Jinshun Bi and Jiajun Luo, who share his passion for innovation in semiconductor technology. Their combined expertise has led to advancements that benefit both research and practical applications.

Conclusion

Yinxue Lv's contributions to the field of anti-radiation technology exemplify the spirit of innovation. His work not only enhances the performance of semiconductor devices but also paves the way for future advancements in the industry.