Wuhan, China

Zhefan Li

This inventor holds 3 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignees: Yangtze Memory Technologies Co., Ltd., Yangtze Memory Technologies., Ltd.. Active years: 2025-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zhefan Li. Retrieved from https://idiyas.com/inventor/zhefan-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 66.7

 

Average Co-Inventor Count = 3.4

ph-index = 1


Company Filing History:


Years Active: 2025-2026

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3 patents (USPTO):Explore Patents

Title: Zhefan Li: Innovator in Memory Technology

Introduction

Zhefan Li is a prominent inventor based in Wuhan, China. He has made significant contributions to the field of memory technology, particularly through his innovative approaches to memory operation methods.

Latest Patents

Zhefan Li holds a patent for an "Operation method of memory, memory and memory system." This patent outlines methods for operating memory devices and systems. One of the key aspects of his invention includes a strategy for repairing defective memory cell rows before packaging, which enhances the reliability and efficiency of memory systems.

Career Highlights

Zhefan Li is associated with Yangtze Memory Technologies Co., Ltd., where he applies his expertise in memory technology. His work focuses on developing advanced memory solutions that address current challenges in the industry.

Collaborations

Zhefan Li collaborates with notable colleagues, including Xiaodong Mei and Huangpeng Zhang. Their combined efforts contribute to the advancement of memory technology and innovation within their organization.

Conclusion

Zhefan Li's contributions to memory technology through his patent and work at Yangtze Memory Technologies Co., Ltd. highlight his role as an influential inventor in the field. His innovative methods are paving the way for future advancements in memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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