Nanjing, China

Zhang-Ying Yan


Average Co-Inventor Count = 3.2

ph-index = 1

Forward Citations = 3(Granted Patents)


Location History:

  • Hsinchu, TW (2022 - 2023)
  • Nanjing, CN (2022 - 2024)

Company Filing History:


Years Active: 2022-2024

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8 patents (USPTO):

Title: Innovations of Zhang-Ying Yan

Introduction

Zhang-Ying Yan is a prominent inventor based in Nanjing, China. He has made significant contributions to the field of semiconductor technology, holding a total of eight patents. His work focuses on advanced integrated circuit designs and multilevel interconnection structures.

Latest Patents

One of his latest patents is titled "Multilevel interconnection structure and method for forming the same." This patent describes a semiconductor device that includes a substrate, an active region, an isolation structure, a first metal line, a gate structure, a source/drain region, a source/drain contact, and a second metal line. The active region protrudes from the top surface of the substrate, while the isolation structure surrounds it laterally. The first metal line is integrated within the isolation structure, and the gate structure is positioned over the active region. The source/drain region is also located in the active region, with the source/drain contact electrically connected to it. The second metal line overlaps the first metal line vertically, enhancing the device's functionality.

Another significant patent is "Integrated circuit and an operation method thereof." This patent outlines an integrated circuit that comprises a control circuit and first to second voltage generation circuits. The control circuit is connected between a first voltage terminal and a first node linked to a capacitive unit. The first voltage generation circuit includes at least one first transistor, which adjusts the voltage level of the second node to match the second supply voltage. The second voltage generation circuit works in conjunction with the first voltage terminal and the first and second nodes to maintain the desired voltage levels.

Career Highlights

Zhang-Ying Yan has worked with notable companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company and TSMC Nanjing Company, Limited. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Zhang-Ying Yan has collaborated with several professionals in his field, including Jing Ding and Lei Pan. These collaborations have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Zhang-Ying Yan is a distinguished inventor whose work in semiconductor technology has led to multiple patents and significant advancements in integrated circuit design. His contributions continue to influence the industry and inspire future innovations.

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