The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2024
Filed:
Jul. 27, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tsmc Nanjing Company Limited, Nanjing, CN;
Tsmc China Company Limited, Shanghai, CN;
Zhang-Ying Yan, Nanjing, CN;
Xin-Yong Wang, Shanghai, CN;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, JP;
TSMC NANJING COMPANY LIMITED, Nanjing, CN;
TSMC CHINA COMPANY LIMITED, Shanghai, CN;
Abstract
A semiconductor device includes a substrate, an active region, an isolation structure, a first metal line, gate structure, source/drain region, a source/drain contact, and a second metal line. The active region protrudes from a top surface of the substrate. The isolation structure is over the substrate and laterally surrounds the active region. The first metal line is in the isolation structure. The gate structure is over the active region. The source/drain region is in the active region. The source/drain contact is over the active region and is electrically connected to the source/drain region. The second metal line is over the gate structure and the source/drain contact, in which the second metal line vertically overlaps the first metal line.