Ze He

Title: Ze He: Innovator in Memory Technology

Introduction

Ze He is a prominent inventor based in Beijing, China. He has made significant contributions to the field of memory technology, holding 2 patents that showcase his innovative approach to memory operations.

Latest Patents

His latest patents include a memory operation method for unaligned write, memory, and electronic device. This invention discloses a memory operating method that follows a read-write parallel protocol and includes multiple memory banks. The method involves writing data to a specified location of the first memory bank corresponding to a current logical address while pre-reading original data in a specified location of the second memory bank corresponding to the next logical address in the same clock cycle. By encoding the pre-read original data and the data to be written next, the invention accelerates the encoding operation that may occur subsequently.

Another patent focuses on a memory operating method that complies with a read-write parallel protocol. This method sequentially maps read and write transactions for consecutive logical addresses to different banks according to a predetermined transmission bit width. An arbitration circuit is introduced to manage read and write transactions mapped to the same bank in a current clock cycle, improving the execution efficiency of the read-write parallel protocol.

Career Highlights

Ze He is currently employed at Gigadevice Semiconductor Inc., where he continues to develop innovative memory solutions. His work has significantly impacted the efficiency and performance of memory devices.

Collaborations

He collaborates with talented coworkers, including Nanfei Wang and Yingwu Zhang, who contribute to the advancement of memory technology alongside him.

Conclusion

Ze He is a notable inventor whose work in memory technology has led to significant advancements in the field. His innovative patents reflect his commitment to improving memory operations and device efficiency.