Shijiazhuang, China

Yuxing Cui

This inventor holds 1 USPTO granted patent. Top assignee: The 13Th Research Institute of China Electronics. Active years: 2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuxing Cui. Retrieved from https://idiyas.com/inventor/yuxing-cui

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Yuxing Cui: Innovator in Gallium Nitride Technology

Introduction

Yuxing Cui is a notable inventor based in Shijiazhuang, China. He has made significant contributions to the field of electronics, particularly in the development of gallium nitride (GaN) devices. His innovative approach has led to advancements that enhance the performance and reliability of electronic components.

Latest Patents

Yuxing Cui holds a patent for a "Method for preparing ohmic contact electrode of gallium nitride-based device." This method involves several steps, including the growth of dielectric layers, ion implantation, and high-temperature annealing. The resulting ohmic contact electrode ensures flat surfaces, smooth edges, and stable device breakdown voltage, contributing to the longevity and reliability of GaN-based devices.

Career Highlights

Cui is affiliated with the 13th Research Institute of China Electronics, where he applies his expertise in semiconductor technology. His work focuses on improving the efficiency and effectiveness of electronic devices, particularly those utilizing gallium nitride materials.

Collaborations

Yuxing Cui collaborates with esteemed colleagues such as Xiangwu Liu and Lijiang Zhang. Their combined efforts in research and development have fostered innovation in the field of electronics.

Conclusion

Yuxing Cui's contributions to gallium nitride technology exemplify the impact of innovative thinking in electronics. His patented methods and collaborative efforts continue to advance the industry, ensuring the development of reliable and efficient electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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