The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Feb. 27, 2019
The 13th Research Institute of China Electronics Technology Group Corporation, Hebei, CN;
Yongliang Tan, Shijiazhuang, CN;
Xingzhong Fu, Shijiazhuang, CN;
Zexian Hu, Shijiazhuang, CN;
Xiangwu Liu, Shijiazhuang, CN;
Lijiang Zhang, Shijiazhuang, CN;
Yuxing Cui, Shijiazhuang, CN;
Xingchang Fu, Shijiazhuang, CN;
THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS, Hebei, CN;
Abstract
A method for preparing an ohmic contact electrode of a GaN-based device. Said method comprises the following steps: growing a first dielectric layer () on an upper surface of a device (S); implanting silicon ions and/or indium ions in a region of the first dielectric layer () corresponding to an ohmic contact electrode region, and in the ohmic contact electrode region of the device (S); growing a second dielectric layer () on an upper surface of the first dielectric layer () (S); activating the silicon ions and/or the indium ions by means of a high temperature annealing process, so as to form an N-type heavy doping (S); respectively removing portions, corresponding to the ohmic contact electrode region, of the first dielectric layer () and the second dielectric layer () (S); growing a metal layer () on the upper surface of the ohmic contact electrode region of the device, so as to form an ohmic contact electrode (S). The ohmic contact electrode prepared by the method can ensure that the metal layer () has flat surfaces, smooth and regular edges, and said electrode has stable device breakdown voltage, and is reliable and has a long service life.