This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Fuji Electric., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Yuusuke Ooshima: Innovator in Semiconductor Manufacturing
Introduction
Yuusuke Ooshima is a notable inventor based in Matsumoto, Japan. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent.
Latest Patents
Yuusuke Ooshima holds a patent for a manufacturing method of forming a buffer region of a semiconductor device. This patent involves a process that includes obtaining a substrate concentration index related to the chemical concentrations of oxygen or carbon in the semiconductor substrate. The method classifies this index into predetermined ranges and determines the acceleration energy of hydrogen ions to be implanted into the substrate. This innovative approach allows for the effective formation of a buffer region in semiconductor devices.
Career Highlights
Yuusuke Ooshima is associated with Fuji Electric, Ltd., where he applies his expertise in semiconductor technology. His work has contributed to advancements in manufacturing processes that enhance the performance and reliability of semiconductor devices.
Conclusion
Yuusuke Ooshima's contributions to semiconductor manufacturing through his innovative patent demonstrate his commitment to advancing technology in this critical field. His work continues to influence the development of more efficient semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile