The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Sep. 21, 2023
Fuji Electric Co., Ltd., Kanagawa, JP;
Hiroshi Takishita, Matsumoto-city, JP;
Yuusuke Ooshima, Matsumoto-city, JP;
Takashi Yoshimura, Matsumoto-city, JP;
Shuntaro Yaguchi, Matsumoto-city, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A manufacturing method of a semiconductor device including a buffer region in a semiconductor substrate is provided, comprising: obtaining a substrate concentration index related to at least one of an oxygen chemical concentration or a carbon chemical concentration included in the semiconductor substrate; classifying the substrate concentration index as any index range among a predetermined plurality of index ranges; determining an acceleration energy of hydrogen ions to be implanted into the semiconductor substrate to an acceleration energy that is preset to correspond to the classified index range; and forming a buffer region of the semiconductor device by implanting hydrogen ions into the semiconductor substrate with the determined acceleration energy.