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For the Inventor, By the Inventor

Tokyo, Japan

Yuukoh Katoh

USPTO Granted Patents = 9

Average Co-Inventor Count = 1.1

ph-index = 4

Forward Citations = 59(Granted Patents)


Company Filing History:

goldMedal9 out of 35,771 
 
Nec Corporation
 patents

Years Active: 1998-2010

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9 patents (USPTO):Explore Patents
1. 7723827 - Semiconductor storage device and production method therefor (2010-05-25),
2. 6683802 - Magnetic memory device in which influence of adjacent memory cell is controllable (2004-01-27),
3. 6281536 - Ferroelectric memory device with improved ferroelectric capacity characteristic (2001-08-28),
4. 6159752 - Method of forming para-dielectric and ferro-dielectric capacitors over a (2000-12-11),
5. 615975 - Method of forming para-dielectric and ferro-dielectric capacitors over a (2000-12-12),
6. 6087687 - MISFET device with ferroelectric gate insulator (2000-07-11),
7. 5912835 - Non-volatile ferroelectric memory device for storing data bits restored (1999-06-15),
8. 5768176 - Method of controlling non-volatile ferroelectric memory cell for (1998-06-16),
9. 5721700 - Non-volatile semiconductor memory device in which applied voltage to (1998-02-24),

Title: Innovations of Yuukoh Katoh

Introduction

Yuukoh Katoh is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of nine patents. His work focuses on enhancing the efficiency and functionality of magnetic memory devices.

Latest Patents

One of his latest patents is for a semiconductor storage device and its production method. This invention involves oxidizing, nitriding, or oxynitriding portions of a laminate film that constitutes magnetic elements. The process utilizes plasma processing with a conductive mask to ensure that multiple magnetic elements are effectively separated. The laminate film consists of a magnetic element region formed with magnetic elements and an insulated region made of oxides, nitrides, or oxynitrides. Additionally, upper wiring, such as a bit line, is formed later, allowing for direct contact between the magnetic elements and the upper wiring.

Another notable patent is for a magnetic memory device that allows for controllable influence of adjacent memory cells. This device features multiple word lines and bit lines, with magnetic memory cells located at their intersections. Each memory cell contains a ferromagnetic film, and data is written using a synthetic magnetic field generated by currents flowing through the associated word and bit lines.

Career Highlights

Yuukoh Katoh is currently employed at NEC Corporation, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of magnetic memory devices, making them more efficient and reliable.

Collaborations

He has collaborated with notable coworkers, including Sota Shinohara and Kazushi Amanuma, contributing to various projects that enhance the functionality of semiconductor devices.

Conclusion

Yuukoh Katoh's contributions to semiconductor technology and magnetic memory devices have established him as a key figure in the field. His innovative patents reflect his commitment to advancing technology and improving device performance.

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