Yutaka Kishida

Title: Yutaka Kishida: Innovator in Silicon Single Crystal Production

Introduction

Yutaka Kishida is a prominent inventor based in Yamaguchi, Japan. He has made significant contributions to the field of silicon single crystal production, holding a total of 5 patents. His innovative approaches have enhanced the efficiency and quality of silicon crystal growth processes.

Latest Patents

Kishida's latest patents include a silicone single crystal production process. This process utilizes the Czochralski method with a quartz crucible to produce silicon single crystals with a uniform distribution of oxygen concentration. The method allows for high yield production without being affected by changes in crystal diameter and the initial amount of melt feedstock. The oxygen concentration is adjusted by estimating it during growth based on the relationship among three parameters: crucible rotation rate, crucible temperature, and the ratio of contact area of molten silicon with the inner wall of the crucible and atmospheric gas. Additionally, he has developed a crucible for the growth of silicon single crystals, which enhances productivity, yield, and quality. This crucible features an inner bottom surface with a raised portion symmetrical about the rotary axis, designed to optimize the growth process.

Career Highlights

Throughout his career, Yutaka Kishida has worked with notable companies such as Siltronic AG and Nippon Steel Corporation. His experience in these organizations has contributed to his expertise in the field of silicon crystal production.

Collaborations

Kishida has collaborated with several professionals in his field, including Teruyuki Tamaki and Seiki Takebayashi. These collaborations have furthered advancements in silicon single crystal technology.

Conclusion

Yutaka Kishida's innovative work in silicon single crystal production has made a significant impact on the industry. His patents and collaborations reflect his dedication to advancing technology in this field.