The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Jul. 27, 1999
Applicant:
Inventors:
Yutaka Kishida, Kanagawa, JP;
Wataru Ohashi, Kanagawa, JP;
Teruyuki Tamaki, Kanagawa, JP;
Seiki Takebayashi, Kanagawa, JP;
Assignee:
Nippon Steel Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/522 ;
U.S. Cl.
CPC ...
C30B 1/522 ;
Abstract
In the growth of a large silicon single crystal weighing not less than 100 kg by the Czokralski method resorting to application of a magnetic field, a crucible, not less than 0.7 m in inside diameter is used, and a cusped magnetic field which manifests a maximum intensity of not more than 1000 gausses on the inner wall of the crucible is applied.