Yuta Shiratori

Title: Yuta Shiratori: Innovator in Semiconductor Technology

Introduction

Yuta Shiratori is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of heterojunction bipolar transistors. With a total of 3 patents to his name, Shiratori's work has garnered attention in the industry.

Latest Patents

Shiratori's latest patents include innovative methods for manufacturing heterojunction bipolar transistors. One of his patents describes a structure where an emitter contact layer, an emitter layer, a base layer, a p-type base layer, a collector layer, and a sub-collector layer are crystal-grown over a first substrate. This process utilizes a Group III polar surface, with the emitter contact layer made of a nitride semiconductor that is n-type at a relatively high concentration. Another patent outlines a method where the first collector layer is composed of n-type InP doped with silicon at a low concentration, while the base layer consists of p-type GaAsSb doped with carbon at a high concentration.

Career Highlights

Yuta Shiratori is currently employed at Nippon Telegraph and Telephone Corporation, where he continues to push the boundaries of semiconductor research. His work has been instrumental in advancing the technology used in various electronic devices.

Collaborations

Shiratori has collaborated with notable colleagues in his field, including Minoru Ida and Takuya Hoshi. Their combined expertise has contributed to the successful development of innovative semiconductor technologies.

Conclusion

Yuta Shiratori's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence advancements in electronic devices and semiconductor manufacturing.