The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Jun. 04, 2019
Applicant:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Inventors:
Assignee:
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/205 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/207 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 29/0817 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/207 (2013.01); H01L 29/401 (2013.01); H01L 29/41708 (2013.01); H01L 29/42304 (2013.01); H01L 29/66318 (2013.01); H01L 29/737 (2013.01);
Abstract
A first collector layer is composed of n-type InP (n-InP) doped with Si at a low concentration. A second collector layer is composed of non-doped InGaAs. A base layer is composed of p-type GaAsSb (p-GaAsSb) doped with C at a high concentration. An emitter layer is composed of a compound semiconductor different from that of the base layer, and has an area smaller than the base layer in a plan view. An emitter layer can be composed of, for example, n-type InP (n-InP) doped with Si at a low concentration.