Yokohama, Japan

Yusuke Niki

USPTO Granted Patents = 7 

Average Co-Inventor Count = 1.1

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Kanagawa, JP (2019)
  • Yokohama Kanagawa, JP (2021)
  • Yokohama, JP (2020 - 2023)

Company Filing History:


Years Active: 2019-2023

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7 patents (USPTO):Explore Patents

Title: Yusuke Niki: Innovator in Semiconductor Technology

Introduction

Yusuke Niki is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on enhancing memory devices, which are crucial for modern electronic applications.

Latest Patents

Among his latest innovations, Yusuke Niki has developed a semiconductor storage device that features a memory structure with first signal lines divided into groups. This design includes global signal lines that apply selection voltages to the first signal lines. The memory cell array consists of memory cells, with first transistors corresponding to each first signal line. These transistors are connected to global signal lines, allowing for efficient memory operations. His patents also describe configurations that enhance the performance of memory devices by optimizing the connection between signal lines and transistors.

Career Highlights

Yusuke Niki has worked with notable companies in the semiconductor industry, including Kioxia Corporation and Toshiba Memory Corporation. His experience in these organizations has allowed him to refine his expertise in memory technology and contribute to advancements in the field.

Collaborations

Yusuke Niki has collaborated with talented individuals such as Atsushi Kawasumi and Takayuki Miyazaki. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Yusuke Niki's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the evolution of memory devices, making significant strides in enhancing their performance and efficiency.

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