Hubei, China

Yushan Shen

This inventor holds 2 USPTO granted patents. Top assignee: Huazhong University of Science and Technology. Active years: 2021-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yushan Shen. Retrieved from https://idiyas.com/inventor/yushan-shen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 1


Company Filing History:


Years Active: 2021-2022

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2 patents (USPTO):Explore Patents

Title: Yushan Shen: Innovator in Three-Dimensional Stacked Memory Technology

Introduction

Yushan Shen is a prominent inventor based in Hubei, China. He has made significant contributions to the field of memory technology, particularly in the development of three-dimensional stacked memory systems. With a total of 2 patents to his name, Shen's work is paving the way for advancements in data storage solutions.

Latest Patents

Shen's latest patents include innovative methods for creating three-dimensional stacked memory. The first patent, titled "Three-dimensional stacked memory and preparation method thereof," discloses a method that utilizes a constrained structure phase change storage unit. This method employs a crossbar storage array structure to build a large-capacity storage array. The preparation process involves several steps, including the creation of strip-shaped electrodes and insulating layers, ultimately leading to the formation of a two-layer stacked phase change memory.

The second patent, "Three-dimensional stacked phase change memory and preparation method thereof," outlines a method for constructing a multilayer stacked phase change memory with a vertical structure. This involves preparing horizontal electrodes, phase change layers, and selectors, culminating in a sophisticated memory architecture that enhances storage efficiency.

Career Highlights

Yushan Shen is affiliated with Huazhong University of Science and Technology, where he continues to engage in cutting-edge research and development in memory technology. His work is characterized by a commitment to innovation and excellence in the field.

Collaborations

Shen collaborates with notable colleagues, including Xiangshui Miao and Hao Tong. Their combined expertise contributes to the advancement of memory technology and the exploration of new methodologies.

Conclusion

Yushan Shen's contributions to three-dimensional stacked memory technology exemplify his innovative spirit and dedication to advancing data storage solutions. His patents reflect a deep understanding of memory systems and their potential to transform the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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