Huazhong University of Science and Technology

Yushan Shen

Xiangshui Miao

Hao Tong

Wang Cai

The disclosure discloses a three-dimensional stacked memory and a preparation method thereof. The storage unit adopts a constrained structure phase change storage unit, and uses a crossbar storage array structure to build a large-capacity storage array. The preparation method includes: preparing N first strip-shaped electrodes along a crystal direction on a substrate; preparing a first insulating layer with M*N array of through holes; filling the M*N array of through holes of the first insulating layer with a phase change material to form first phase change units; preparing M second strip-shaped electrodes; preparing a second insulating layer, using spin-coated photoresist as a sacrificial material, performing a local planarization on the surface of the second insulating layer; forming M*N array of through holes on the second insulating layer; filling a phase change material to form second phase change units; preparing N third strip-shaped electrodes to form a two-layer stacked phase change memory.

Three-dimensional stacked memory and preparation method thereof

A three-dimensional stacked phase change memory and a preparation method thereof are provided. The method comprises: preparing first horizontal electrodes spaced apart from each other on a substrate; preparing first strip-shaped phase change layers, each having a central gap, between the first horizontal electrodes; preparing first selectors in the central gaps of the first strip-shaped phase change layers; preparing a first insulating layer; preparing second strip-shaped phase change layers at same vertical positions on the first insulating layer; preparing second selectors; then preparing horizontally-oriented insulating holes between the horizontal electrodes; and preparing vertical electrodes between the adjacent insulating holes, thereby forming a multilayer stacked phase change memory with a vertical structure.

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Hubei, China

Yushan Shen