The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2022
Filed:
Aug. 09, 2018
Huazhong University of Science and Technology, Hubei, CN;
HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Hubei, CN;
Abstract
The disclosure discloses a three-dimensional stacked memory and a preparation method thereof. The storage unit adopts a constrained structure phase change storage unit, and uses a crossbar storage array structure to build a large-capacity storage array. The preparation method includes: preparing N first strip-shaped electrodes along a crystal direction on a substrate; preparing a first insulating layer with M*N array of through holes; filling the M*N array of through holes of the first insulating layer with a phase change material to form first phase change units; preparing M second strip-shaped electrodes; preparing a second insulating layer, using spin-coated photoresist as a sacrificial material, performing a local planarization on the surface of the second insulating layer; forming M*N array of through holes on the second insulating layer; filling a phase change material to form second phase change units; preparing N third strip-shaped electrodes to form a two-layer stacked phase change memory.