Yury Georgievich Shreter

Title: Yury Georgievich Shreter: Innovator in Semiconductor Technology

Introduction

Yury Georgievich Shreter is a prominent inventor based in Saint-Petersburg, Russia. He has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. His innovative methods have advanced the way semiconductor crystals are processed and utilized in various applications.

Latest Patents

One of Shreter's notable inventions is a method of separating the surface layer of semiconductor crystals using a laser beam perpendicular to the separating plane. This invention includes two variations of the method. In the first variation, a focused laser beam is directed onto the crystal, with the focus placed in the layer separation plane. The laser beam is then moved to scan the layer separation plane, forming a continuous slit that increases in width with each pass until the surface layer is separated. The second variation involves generating pulse laser emissions, where the focused laser beam is again directed onto the crystal. This method creates non-overlapping local regions with disturbed topology and reduced interatomic bonds, allowing for effective separation of flat lateral surface layers from semiconductor crystals.

Career Highlights

Throughout his career, Yury Georgievich Shreter has worked with various companies, including Arima Optoelectronics Corporation. His expertise in semiconductor technology has positioned him as a key figure in the industry, contributing to advancements that benefit multiple sectors.

Collaborations

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