The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
May. 23, 2003
Yury Georgievich Shreter, 194223 St Petersburg, RU;
Yury Toomasovich Rebane, 194214 St Petersburg, RU;
Ruslan Ivanovich Gorbunov, 197029 St Petersburg, RU;
Sergey Igorevich Stepanov, 193124 St. Petersburg, RU;
Vladislav Evgenievich Bougrov, 195271 St. Petersburg, RU;
Vladimir Nikolaev, 197348 St. Petersburg, RU;
Maxim Nikolaevich Blashenkov, 198255 St. Petersburg, RU;
Alexander Nikolaevich Andreev, 193312 St. Petersburg, RU;
Stephen Sen-tien Lee, Taipei, TW;
Yury Georgievich Shreter, 194223 St Petersburg, RU;
Yury Toomasovich Rebane, 194214 St Petersburg, RU;
Ruslan Ivanovich Gorbunov, 197029 St Petersburg, RU;
Sergey Igorevich Stepanov, 193124 St. Petersburg, RU;
Vladislav Evgenievich Bougrov, 195271 St. Petersburg, RU;
Vladimir Nikolaev, 197348 St. Petersburg, RU;
Maxim Nikolaevich Blashenkov, 198255 St. Petersburg, RU;
Alexander Nikolaevich Andreev, 193312 St. Petersburg, RU;
Stephen Sen-Tien Lee, Taipei, TW;
Other;
Abstract
A chemical vapor deposition reactor for depositing a thin film on at least a substrate through a reaction between a vertical input reagent gas flow and the at least a substrate is provided, in which a vertical output reagent gas flow is produced after the reaction. The reactor includes a vertical tube, at least a reaction chamber located inside the vertical tube, an input flow baffle located on the at least a reaction chamber, and at least a gas exit installed on the at least a reaction chamber for exhausting the vertical input reagent gas flow and the vertical output reagent gas flow. In addition, the substrate is located at the bottom of the at least a reaction chamber. The provided reactors allow the achievement of more efficient heating process, lower gas consumption and higher growth uniformity than the conventional reactors.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile