The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7265374 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 04, 2007

Filed:

Jun. 10, 2005
Applicants:

Stephen Lee, Taipei, TW;

Yury Georgievich Shreter, St Petersburg, RU;

Yury Toomasovich Rebane, St Petersburg, RU;

Ruslan Ivanovich Gorbunov, St Petersburg, RU;

Inventors:

Stephen Lee, Taipei, TW;

Yury Georgievich Shreter, St Petersburg, RU;

Yury Toomasovich Rebane, St Petersburg, RU;

Ruslan Ivanovich Gorbunov, St Petersburg, RU;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current thereof is reduced. In addition, the provided light emitting semiconductor device fabricated via a planar technology process is microscopically planar, but not planar at micro- and nano-scale. Hence the parasitic wave guiding effect, which suppresses the light extraction efficiency of the light emitting semiconductor device, is destroyed thereby.

Published as:

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Lee, Stephen. (2007). Light emitting semiconductor device (U.S. Patent No. 7265374). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7265374

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