Location History:
- Riga, LV (2000)
- Jurmala, LV (2008 - 2010)
Company Filing History:
2 out of 301 
1 out of 42 
Years Active: 2000-2010
Title: **Yuri Gelfgat: Pioneer in Silicon Crystal Production**
Introduction
Yuri Gelfgat, an accomplished inventor based in Jurmala, Latvia, has made significant strides in the field of semiconductor technology. With three patents to his name, Gelfgat has demonstrated a profound understanding of crystal manufacturing processes, particularly in silicon single crystal production.
Latest Patents
Yuri Gelfgat's latest innovations include the following patents:
1. **Process and Apparatus for Producing a Silicon Single Crystal**
This patent describes a method for producing a silicon single crystal by pulling it from a silicon melt contained in a crucible with a diameter of at least 450 mm. It includes the use of a heat shield and introduces a traveling magnetic field that exerts a vertically oriented force on the melt in the region of the crucible wall. The resulting single crystal has a diameter of at least 200 mm, enhancing its quality and manufacturing efficiency.
2. **Silicon Single Crystal and Process for Producing It**
This innovation outlines a silicon single crystal that exhibits a uniform defect picture and minimal radial dopant and oxygen variations over more than 10 percent of the ingot length. It utilizes the Czochralski method and emphasizes a temperature distribution in the melt that deviates from rotational symmetry, optimizing the solidification process.
Career Highlights
Throughout his career, Yuri Gelfgat has contributed his expertise to leading companies in the semiconductor sector. He has worked with notable organizations such as Siltronic AG and Wacker Siltronic Gesellschaft für Halbleitermaterialien AG, where he has developed crucial technologies for silicon production.
Collaborations
In his professional journey, Gelfgat has collaborated with esteemed colleagues, including Erich Tomzig and Wilfried von Ammon. These partnerships have fostered an environment of innovation and have led to advancements in semiconductor technology.
Conclusion
Yuri Gelfgat's contributions to the field of silicon single crystal production reflect his dedication to innovation and excellence. His patents serve as a testament to his inventive spirit and his impact within the semiconductor industry. As his work continues to evolve, it will undoubtedly leave a lasting mark on technologies that rely on high-quality silicon crystals.