The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2010
Filed:
Jan. 17, 2002
Janis Virbulis, Burghausen, DE;
Wilfried Von Ammon, Hochburg/Ach, AT;
Erich Tomzig, Burgkirchen, DE;
Yuri Gelfgat, Jurmala, LV;
Lenoid Gorbunov, Riga, LV;
Janis Virbulis, Burghausen, DE;
Wilfried Von Ammon, Hochburg/Ach, AT;
Erich Tomzig, Burgkirchen, DE;
Yuri Gelfgat, Jurmala, LV;
Lenoid Gorbunov, Riga, LV;
Siltronic AG, Munich, DE;
Abstract
A process for producing a silicon single crystal is by pulling the single crystal from a silicon melt which is contained in a crucible with a diameter of at least 450 mm, above which a heat shield is arranged. The single crystal being pulled has a diameter of at least 200 mm. The silicon melt is exposed to the influence of a traveling magnetic field which exerts a substantially vertically oriented force on the melt in the region of the crucible wall. There is also an apparatus which is suitable for carrying out the process.