Company Filing History:
Years Active: 2009-2012
Title: Yung-Tao Lin: Innovator in Non-Volatile Memory Technology
Introduction
Yung-Tao Lin is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of non-volatile memory technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and reliability of memory cell structures.
Latest Patents
Yung-Tao Lin's latest patents include a novel MRAM cell structure designed to prevent short circuits. This MRAM cell structure features a bottom electrode, a magnetic tunnel junction unit, a top electrode, and a blocking layer that is wider than the magnetic tunnel junction unit. This design effectively prevents the formation of short circuits between a contact and the magnetic tunnel junction unit. Another significant patent is for a logic compatible storage device, which comprises a floating gate over a semiconductor substrate and multiple capacitors. This non-volatile memory cell is designed to improve the performance and reliability of memory storage.
Career Highlights
Yung-Tao Lin is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., a leading firm in the semiconductor industry. His work at this company has allowed him to push the boundaries of memory technology and contribute to advancements in the field.
Collaborations
Yung-Tao Lin has collaborated with notable colleagues, including Ya-Chen Kao and Chun-Jung Lin. These collaborations have fostered innovation and development in their shared field of expertise.
Conclusion
Yung-Tao Lin is a key figure in the advancement of non-volatile memory technology, with a focus on innovative designs that enhance performance and reliability. His contributions continue to shape the future of memory storage solutions.