The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Sep. 27, 2007
Ya-chen Kao, Hsin-Chu, TW;
Chun-jung Lin, HsinChu, TW;
Yu-jen Wang, Hsinchu, TW;
Hsu-chen Cheng, Hsinchu, TW;
Feng-jia Shiu, Hsinchu, TW;
Yung-tao Lin, Hsinchu, TW;
Ya-Chen Kao, Hsin-Chu, TW;
Chun-Jung Lin, HsinChu, TW;
Yu-Jen Wang, Hsinchu, TW;
Hsu-Chen Cheng, Hsinchu, TW;
Feng-Jia Shiu, Hsinchu, TW;
Yung-Tao Lin, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A MRAM cell structure includes a bottom electrode; a magnetic tunnel junction unit disposed on the bottom electrode; a top electrode disposed on the magnetic tunnel junction unit; and a blocking layer disposed on the top electrode, wherein the blocking layer is wider than the magnetic tunnel junction unit for preventing against formation of a short circuit between a contact and the magnetic tunnel junction unit.