Yun-Han Ma

Title: Innovations by Yun-Han Ma in High Voltage Devices

Introduction

Yun-Han Ma is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of high voltage devices, showcasing his expertise through his innovative patent.

Latest Patents

Yun-Han Ma holds a patent for a "Method of fabricating high voltage device." This invention provides a high voltage device that includes a gate on a substrate, two source/drain regions in the substrate beside the gate, and a composite gate dielectric layer. The composite gate dielectric layer consists of at least two stacked continuous layers, extending from one side to another side of the gate. The at least two stacked continuous layers are a combination of at least one thermal oxide layer and at least one chemical vapor deposited layer. This innovative approach enhances the performance and reliability of high voltage devices.

Career Highlights

Yun-Han Ma is currently employed at United Microelectronics Corporation, a leading semiconductor company. His work at this organization has allowed him to further develop his skills and contribute to advancements in semiconductor technology.

Collaborations

Yun-Han Ma has collaborated with several talented individuals in his field, including Ming-Tsung Lee and Shih-Ming Liang. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Yun-Han Ma's contributions to the field of high voltage devices through his patent demonstrate his commitment to innovation and excellence. His work continues to influence the semiconductor industry and inspire future advancements.