The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Sep. 11, 2007
Applicants:
Yun-han MA, Taipei, TW;
Ming-tsung Lee, Yilan County, TW;
Shih-ming Liang, Hsinchu County, TW;
Hwi-huang Chen, Hsinchu, TW;
Inventors:
Yun-Han Ma, Taipei, TW;
Ming-Tsung Lee, Yilan County, TW;
Shih-Ming Liang, Hsinchu County, TW;
Hwi-Huang Chen, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A high voltage device is provided. The high voltage device includes a gate on a substrate, two source/drain regions in the substrate beside the gate, and a composite gate dielectric layer that includes at least two stacked continuous layers, extending from one side to another side of the gate. Wherein, the at least two stacked continuous layers is a combination of at least one thermal oxide layer and at least one chemical vapor deposited layer.