Shih-Ming Liang

Title: Shih-Ming Liang: Innovator in High Voltage Device Fabrication

Introduction

Shih-Ming Liang is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of high voltage devices. His innovative approach has led to the development of a unique method that enhances device performance.

Latest Patents

Shih-Ming Liang holds a patent for a "Method of fabricating high voltage device." This high voltage device includes a gate on a substrate, two source/drain regions in the substrate beside the gate, and a composite gate dielectric layer. The composite layer consists of at least two stacked continuous layers, which extend from one side to another side of the gate. This innovative design combines at least one thermal oxide layer and at least one chemical vapor deposited layer, improving the overall efficiency and reliability of high voltage devices.

Career Highlights

Liang is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work focuses on advancing technologies that are crucial for modern electronic devices. With a patent portfolio that includes 1 patent, he continues to push the boundaries of innovation in his field.

Collaborations

Shih-Ming Liang collaborates with talented individuals such as Yun-Han Ma and Ming-Tsung Lee. These partnerships foster a creative environment that enhances the development of cutting-edge technologies.

Conclusion

Shih-Ming Liang's contributions to high voltage device fabrication exemplify the spirit of innovation in the semiconductor industry. His work not only advances technology but also sets a foundation for future developments in the field.