Weonju, South Korea

Yun-gi Kim

This inventor holds 11 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 1993-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yun-gi Kim. Retrieved from https://idiyas.com/inventor/yun-gi-kim-qf6cjqfj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 6

Forward Citations = 102(Granted Patents)


Location History:

  • Kangweon, KR (1993)
  • Wonjoo, KR (1994)
  • Wonju, KR (1995 - 1997)
  • Weonju, KR (1994 - 1998)
  • Kangwon-do, KR (1997 - 2000)
  • Yongin, KR (2008)

Company Filing History:


Years Active: 1993-2008

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11 patents (USPTO):Explore Patents

Title: Innovations of Yun-gi Kim

Introduction

Yun-gi Kim is a prominent inventor based in Weonju, South Korea. He has made significant contributions to the field of technology, particularly in the areas of printing and memory cell fabrication. With a total of 11 patents to his name, Kim continues to push the boundaries of innovation.

Latest Patents

One of his latest inventions is the "Bubble-ink jet print head and fabrication method thereof." This innovative print head features a substrate with ink chambers designed to store ink and resistance heat emitting bodies that heat the ink. The design includes an ink supply passage that penetrates the substrate and connects with the ink chambers. The first trench formed at the substrate's surface has a specific pattern that maintains a separating distance from the ink chamber inlets. Additionally, a second trench is formed at the opposite surface, ensuring effective communication with the first trench.

Another notable patent is related to "Methods of fabricating memory cells with reduced area capacitor." This invention involves a memory cell that includes an insulation region on the substrate and a transistor with a gate and source/drain region. The design incorporates a capacitor with an electrode over the insulation region, which is crucial for enhancing the performance of memory cells. The use of materials such as platinum for the first electrode and ferroelectric materials like lead zirconate titanate (PZT) or barium strontium titanate (BST) further exemplifies the advanced technology behind this invention.

Career Highlights

Yun-gi Kim is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate and develop new technologies. His work has significantly impacted the electronics industry, particularly in enhancing printing technologies and memory cell designs.

Collaborations

Throughout his career, Kim has collaborated with notable colleagues, including Byeong-yeol Kim and Cheon-su Bhan. These collaborations have fostered a creative environment that has led to groundbreaking advancements in their respective fields.

Conclusion

Yun-gi Kim's contributions to technology through his patents and innovations highlight his role as a leading inventor in the industry. His work at Samsung Electronics Co., Ltd. and his collaborations with other talented individuals further emphasize the importance of teamwork in driving technological advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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