The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 1993
Filed:
Jan. 17, 1992
Samsung Electronics Co., Ltd., Kyunggi, KR;
Abstract
An isolation method in a semiconductor device which includes the steps of growing a pad oxide layer on a semiconductor substrate, depositing a polysilicon layer and a first silicon nitride layer on the pad oxide layer, removing and patterning the first silicon nitride layer to define an active region and a field region, depositing a second silicon nitride layer and a thick oxide layer, forming oxide spacers and nitride spacers, ion-implanting impurities, removing the oxide spacers, growing a field oxide layer, and sequentially removing the first silicon nitride layer, the nitride spacers, the polysilicon layer, and the pad oxide layer. This method minimizes the bird's beaks regions and increases the effective isolation distance of the device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile