The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 1998
Filed:
Aug. 22, 1997
Yun-Gi Kim, Weonju, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A ferroelectric semiconductor random access memory (RAM) is disclosed, which comprises a memory cell array having a plurality of memory cells arranged in a matrix, each of the memory cells having an access transistor and a ferroelectric capacitor, a plurality of bit lines of open bit line structure connected with corresponding sense amplifiers, and a plurality of reference cells arranged symmetrically against the sense amplifiers for providing reference voltage to the reference input terminals of the sense amplifiers toe sense the logical states of the data stored in the memory cells. In this device, the reference voltage is provided from one of the reference cells.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile