Yun-Fei Li

Title: Innovations of Yun-Fei Li in Interconnect Structures

Introduction

Yun-Fei Li is a notable inventor based in Singapore, recognized for his contributions to the field of interconnect structures. With a focus on enhancing the performance and reliability of electronic components, he has made significant strides in the industry.

Latest Patents

Yun-Fei Li holds a patent for an innovative interconnect structure and its fabricating method. This patent describes an interconnect structure that includes a substrate, at least one ultra-thick metal (UTM) layer, a first dielectric layer, and at least one pad metal layer. The UTM layer is positioned on the substrate, while the first dielectric layer is placed on the UTM layer, exposing it. The stress of the first dielectric layer ranges from -150 Mpa to -500 Mpa. The pad metal layer is then disposed on the first dielectric layer and is electrically connected to the exposed UTM layer. This invention aims to improve the efficiency and durability of electronic devices.

Career Highlights

Yun-Fei Li is currently employed at United Microelectronics Corporation, where he continues to innovate and develop advanced technologies in semiconductor manufacturing. His work has contributed to the company's reputation as a leader in the industry.

Collaborations

Yun-Fei Li collaborates with talented colleagues, including Keen Zhang and Ji Feng, who share his commitment to advancing technology in their field.

Conclusion

Yun-Fei Li's innovative work in interconnect structures exemplifies the importance of research and development in the semiconductor industry. His contributions are paving the way for more efficient electronic devices, showcasing the impact of dedicated inventors in technology.