The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2019
Filed:
Jan. 06, 2017
United Microelectronics Corp., Hsinchu, TW;
Keen Zhang, Singapore, SG;
Ji Feng, Singapore, SG;
De-Jin Kong, Singapore, SG;
Yun-Fei Li, Singapore, SG;
Guo-Hai Zhang, Singapore, SG;
Ching-Hwa Tey, Singapore, SG;
Jing Feng, Singapore, SG;
United Microelectronics Corp., Hsinchu, TW;
Abstract
An interconnect structure including a substrate, at least one ultra-thick metal (UTM) layer, a first dielectric layer and at least one pad metal layer is provided. The at least one UTM layer is disposed on the substrate. The first dielectric layer is disposed on the at least one UTM layer and exposes the at least one UTM layer. A stress of the first dielectric layer is −150 Mpa to −500 Mpa. The at least one pad metal layer is disposed on the first dielectric layer and electrically connected to the at least one UTM layer exposed by the first dielectric layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile