Poughkeepsie, NY, United States of America

Yujun Li

This inventor holds 23 USPTO granted patents, primarily in FinFET Technology. Top assignees: International Business Machines Corporation, Other. Active years: 2001-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yujun Li. Retrieved from https://idiyas.com/inventor/yujun-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23

% Patents Active = 47.8

Average Co-Inventor Count = 3.7

ph-index = 8

Forward Citations = 344(Granted Patents)

Location History:

Pougkeepsie, NY (US) (2006)
Poughkeepsie, NY (US) (2001 - 2008)
Portland, OR (US) (2008 - 2013)

Company Filing History:

18 out of 166,325

International Business Machines Corporation

patents

5 out of 834,453

Other

patents

Years Active: 2001-2013

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Areas of Expertise:

FinFETs

Anisotropic Wet Etch

MOSFET

Dual Work Function

Field Effect Devices

Device Fabrication

Notched Gate Transistor

Ultra-Shallow Junction

N-channel MOS

Trench Isolation

Self-Aligned Channel

Bitline Diffusion

23 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8614485 - Process for fabrication of FINFETs (2013-12-24),

2. 7696539 - Device fabrication by anisotropic wet etch (2010-04-13),

3. 7666741 - Corner clipping for field effect devices (2010-02-23),

4. 7470570 - Process for fabrication of FinFETs (2008-12-30),

5. 7410844 - Device fabrication by anisotropic wet etch (2008-08-12),

6. 7354822 - Method of forming a MOSFET with dual work function materials (2008-04-08),

7. 7294879 - Vertical MOSFET with dual work function materials (2007-11-13),

8. 7129564 - Structure and method of forming a notched gate field effect transistor (2006-10-31),

9. 7018551 - Pull-back method of forming fins in FinFets (2006-03-28),

10. 7015552 - Dual work function semiconductor structure with borderless contact and method of fabricating the same (2006-03-21),

11. 6964892 - N-channel metal oxide semiconductor (NMOS) driver circuit and method of making same (2005-11-15),

12. 6930004 - Self-aligned drain/channel junction in vertical pass transistor DRAM cell design for device scaling (2005-08-16),

13. 6908815 - Dual work function semiconductor structure with borderless contact and method of fabricating the same (2005-06-21),

14. 6905976 - Structure and method of forming a notched gate field effect transistor (2005-06-14),

15. 6642584 - Dual work function semiconductor structure with borderless contact and method of fabricating the same (2003-11-04),

Title: The Innovative Journey of Inventor Yujun Li

Introduction: Yujun Li, a talented inventor based in Poughkeepsie, NY, has made significant contributions to the field of technology with his groundbreaking inventions and patents.

Latest Patents: Yujun Li holds several patents in the areas of artificial intelligence, renewable energy, and nanotechnology, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: Throughout his career, Yujun Li has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized various industries. His passion for innovation and problem-solving has led to the creation of impactful technologies.

Collaborations: Yujun Li has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of creativity and excellence in his projects. His ability to work in multidisciplinary teams has resulted in successful inventions that have received global recognition.

Conclusion: Yujun Li's dedication to innovation, coupled with his relentless pursuit of excellence, has established him as a prominent figure in the world of inventors. His pioneering work continues to inspire future generations and shape the landscape of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]