Company Filing History:
Years Active: 2021-2023
Title: Yujiro Ishihara: Innovator in Group III Nitride Semiconductor Technology
Introduction
Yujiro Ishihara is a prominent inventor based in Tochigi, Japan, known for his significant contributions to the field of semiconductor technology. He holds a total of four patents, showcasing his expertise and innovative spirit in the development of group III nitride semiconductor substrates.
Latest Patents
Ishihara's latest patents include a method of manufacturing group III nitride semiconductor substrates, a group III nitride semiconductor substrate, and a bulk crystal. The method involves several steps, including fixing a base substrate with a semipolar plane to a susceptor, forming a first growth layer using the HVPE method, cooling the laminate, and forming a second growth layer. His group III nitride semiconductor substrate is designed to be a free-standing substrate formed of group III nitride semiconductor crystals, with both main surfaces exhibiting semipolar planes. This innovation ensures that variations in quality among devices manufactured over the substrate are minimized.
Career Highlights
Ishihara has made remarkable strides in the semiconductor industry through his work at Furukawa Co., Ltd. His dedication to advancing semiconductor technology has positioned him as a key figure in this field. His patents reflect a deep understanding of the complexities involved in semiconductor manufacturing and the importance of quality control in device performance.
Collaborations
Ishihara has collaborated with notable colleagues, including Hiroki Goto and Shoichi Fuda. These partnerships have likely contributed to the innovative advancements in his research and development efforts.
Conclusion
Yujiro Ishihara's work in group III nitride semiconductor technology exemplifies the impact of innovation in the semiconductor industry. His patents and collaborations highlight his commitment to advancing technology and improving device quality.