The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2021
Filed:
Mar. 19, 2018
Applicant:
Furukawa Co., Ltd., Tokyo, JP;
Inventors:
Hiroki Goto, Tochigi, JP;
Yujiro Ishihara, Tochigi, JP;
Assignee:
FURUKAWA CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 29/40 (2006.01); C23C 16/02 (2006.01); C23C 16/30 (2006.01); C30B 25/18 (2006.01); C30B 29/68 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); C23C 16/0209 (2013.01); C23C 16/303 (2013.01); C30B 25/183 (2013.01); C30B 25/186 (2013.01); C30B 29/68 (2013.01); H01L 29/2003 (2013.01);
Abstract
There is provided a group III nitride semiconductor substrate (free-standing substrate ()) that is formed of a group III nitride semiconductor crystal and has a thickness of 300 μm or more and 1000 μm or less. Both exposed first and second main surfaces in a relationship of top and bottom are semipolar planes. A difference in a half width of an X-ray rocking curve (XRC) measured by making X-rays incident on each of the first and second main surfaces in parallel to an m axis of the group III nitride semiconductor crystal is 500 arcsec or less.