The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2021
Filed:
Dec. 18, 2017
Furukawa Co., Ltd., Tokyo, JP;
Yasunobu Sumida, Tokyo, JP;
Yasuharu Fujiyama, Tochigi, JP;
Hiroki Goto, Tochigi, JP;
Takuya Nakagawa, Tochigi, JP;
Yujiro Ishihara, Tochigi, JP;
FURUKAWA CO., LTD., Tokyo, JP;
Abstract
A method for manufacturing a group III nitride semiconductor substrate includes a preparation step Sfor preparing a group III nitride semiconductor substrate having a sapphire substrate having a semipolar plane as a main surface, and a group III nitride semiconductor layer positioned over the main surface, in which a <0002> direction of the sapphire substrate and a <10-10> direction of the group III nitride semiconductor layer do not intersect at right angles in a plan view in a direction perpendicular to the main surface, and a growth step Sfor epitaxially growing a group III nitride semiconductor over the group III nitride semiconductor layer.