The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2023
Filed:
Mar. 19, 2018
Furukawa Co., Ltd., Tokyo, JP;
Yujiro Ishihara, Tochigi, JP;
Hiroki Goto, Tochigi, JP;
Shoichi Fuda, Tochigi, JP;
Tomohiro Kobayashi, Tochigi, JP;
Hitoshi Sasaki, Tochigi, JP;
FURUKAWA CO., LTD., Tokyo, JP;
Abstract
There is provided a method of manufacturing a group III nitride semiconductor substrate including: a fixing step Sof fixing abase substrate, which includes a group III nitride semiconductor layer having a semipolar plane as a main surface, to a susceptor; a first growth step Sof forming a first growth layer by growing a group III nitride semiconductor over the main surface of the group III nitride semiconductor layer in a state in which the base substrate is fixed to the susceptor using an HVPE method; a cooling step Sof cooling a laminate including the susceptor, the base substrate, and the first growth layer; and a second growth step Sof forming a second growth layer by growing a group III nitride semiconductor over the first growth layer in a state in which the base substrate is fixed to the susceptor using the HVPE method.