Yuji Otsuki

Title: Yuji Otsuki: Advancing Silicon Nitride Film Formation.

Introduction

Yuji Otsuki is an inventor based in Nirasaki City, Japan, and is associated with Tokyo Electron Limited. His work includes a patented method for forming silicon nitride films in recessed areas of a substrate.

Latest Patents

Otsuki’s listed patent is titled “Method of Forming Silicon Nitride Film and Film Forming Apparatus.” The method describes forming an adsorption-inhibiting region by exposing a substrate to plasma generated from a gas containing both halogen and non-halogen gases. A silicon-containing gas is then adsorbed in areas outside that region, after which exposure to plasma generated from a nitrogen-containing gas forms the silicon nitride film. The approach is designed to form the film within a recess on the substrate surface. His listed portfolio includes 1 patent.

Career Highlights

Otsuki’s patent reflects work in semiconductor film formation, an area relevant to the fabrication of electronic devices. His listed affiliation is Tokyo Electron Limited.

Collaborations

The available information identifies Tokyo Electron Limited as Otsuki’s company affiliation. It does not specify additional collaborators or research partners.

Conclusion

Yuji Otsuki’s listed invention addresses silicon nitride film formation in substrate recesses through controlled adsorption and plasma processes, highlighting his contribution to semiconductor manufacturing technology.