The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
Jan. 11, 2022
Tokyo Electron Limited, Tokyo, JP;
Munehito Kagaya, Nirasaki City, JP;
Yuji Otsuki, Nirasaki City, JP;
Yusuke Suzuki, Nirasaki City, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A method of forming a silicon nitride film according to an aspect of the present disclosure forms a silicon nitride film in a recess formed in a surface of a substrate. The method includes a process of forming an adsorption-inhibiting region by exposing the substrate to plasma generated from an adsorption-inhibiting gas that contains a halogen gas and a non-halogen gas, a process of adsorbing a silicon-containing gas in a region other than the adsorption-inhibiting region, and a process of forming a silicon nitride film by exposing the substrate, on which the silicon-containing gas has been adsorbed, to plasma generated from a nitrogen-containing gas.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile