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For the Inventor, By the Inventor

Yokkaichi, Japan

Yuji Fukano

USPTO Granted Patents = 11

Average Co-Inventor Count = 3.8

ph-index = 7

Forward Citations = 235(Granted Patents)


Company Filing History:

goldMedal11 out of 4,519 
 
Sandisk Technologies Inc.
 patents

Years Active: 2016-2021

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11 patents (USPTO):Explore Patents
1. 11011506 - Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same (2021-05-18),
2. 10964715 - Three-dimensional memory device containing channels with laterally pegged dielectric cores (2021-03-30),
3. 10957680 - Semiconductor die stacking using vertical interconnection by through-dielectric via structures and methods for making the same (2021-03-23),
4. 10833100 - Three-dimensional memory device including a deformation-resistant edge seal structure and methods for making the same (2020-11-10),
5. 10665607 - Three-dimensional memory device including a deformation-resistant edge seal structure and methods for making the same (2020-05-26),
6. 10665580 - Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same (2020-05-26),
7. 10347647 - Three-dimensional memory device containing multi-threshold-voltage drain select gates and method of making the same (2019-07-09),
8. 10141331 - Three-dimensional memory device containing support pillars underneath a retro-stepped dielectric material and method of making thereof (2018-11-27),
9. 9711532 - Three dimensional NAND memory having improved connection between source line and in-hole channel material as well as reduced damage to in-hole layers (2017-07-18),
10. 9530781 - Three dimensional NAND memory having improved connection between source line and in-hole channel material as well as reduced damage to in-hole layers (2016-12-27),
11. 9305934 - Vertical NAND device containing peripheral devices on epitaxial semiconductor pedestal (2016-04-05),

Title: Innovator Spotlight: Yuji Fukano

Introduction

Yuji Fukano, an accomplished inventor based in Yokkaichi, Japan, has made significant contributions to the field of semiconductor technology. With a total of 11 patents to his name, Fukano is known for his innovative approaches to enhancing the performance and efficiency of memory devices.

Latest Patents

Fukano's recent patents showcase his expertise in bonded structures and three-dimensional memory technology. His latest inventions include:

1. **Bonded structure including a performance-optimized support chip and a stress-optimized three-dimensional memory chip and method for making the same**: This patent describes a bonded assembly that consists of a memory die featuring a three-dimensional memory array on a first single crystalline semiconductor substrate, and a logic die with peripheral circuitry on a second single crystalline semiconductor substrate. The design aims to minimize stress deformation in the memory chip while maximizing performance in the peripheral circuitry by utilizing different crystallographic orientations for each substrate.

2. **Three-dimensional memory device containing channels with laterally pegged dielectric cores**: In this invention, Fukano details a three-dimensional memory device comprised of a vertical semiconductor channel that surrounds a vertical dielectric core. This structure is supported by laterally extending dielectric pegs, ensuring stability for both the semiconductor channel and the dielectric core, with the potential for enhanced performance and reliability.

Career Highlights

Yuji Fukano has developed a strong career within the innovative landscape of semiconductor technology. His work at SanDisk Technologies Inc. has allowed him to explore cutting-edge solutions for memory devices and has contributed to the overall advancement of the industry. His relentless pursuit of innovation has established him as a notable figure among his peers.

Collaborations

Fukano has had the privilege of collaborating with talented individuals such as Akio Nishida and Naohiro Hosoda. These professional relationships have fostered a creative environment, enabling the exchange of ideas and driving the development of pioneering technologies in the semiconductor sector.

Conclusion

With a robust portfolio of patents and a commitment to innovation, Yuji Fukano continues to influence the evolution of memory technology. His contributions not only advance the field but also embody the spirit of invention that drives progress in the modern technological landscape.

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