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For the Inventor, By the Inventor

Saitama, Japan

Yuichiro Shindo

This inventor holds 9 USPTO granted patents. Top assignee: Japan Energy Corporation. Active years: 1997-2002.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuichiro Shindo. Retrieved from https://idiyas.com/inventor/yuichiro-shindo-oesjjivd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 9

% Patents Active = 100.0

Average Co-Inventor Count = 2.1

ph-index = 6

Forward Citations = 88(Granted Patents)


Location History:

  • Toda, JP (1997 - 2001)
  • Saitama-Ken, JP (2001 - 2002)
  • Saitama, JP (2001 - 2002)

Company Filing History:

goldMedal9 out of 130 
 
Japan Energy Corporation
 patents

Years Active: 1997-2002

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9 patents (USPTO):Explore Patents
1. 6485542 - Ni-Fe alloy sputtering target for forming magnetic thin films, magnetic thin film, and method of manufacturing the Ni-Fe alloy sputtering target (2002-11-26),
2. 6458182 - Process for producing high-purity Mn materials (2002-10-01),
3. 6284013 - Method for preparing high-purity ruthenium sputtering target and high-purity ruthenium sputtering target (2001-09-04),
4. 6270593 - Mn alloy materials for magnetic materials, Mn alloy sputtering targets, and magnetic thin films (2001-08-07),
5. 6267827 - Ni-Fe alloy sputtering target for forming magnetic thin films, magnetic thin film, and method of manufacturing the Ni-Fe alloy sputtering target (2001-07-31),
6. 6245203 - BaxSr1-xTiO3-y target materials for sputtering (2001-06-12),
7. 6036741 - Process for producing high-purity ruthenium (2000-03-14),
8. 5810983 - High purity cobalt sputtering targets (1998-09-22),
9. 5667665 - Process of producing high purity cobalt (1997-09-16),

Title: Innovations of Yuichiro Shindo in Magnetic Thin Films

Introduction

Yuichiro Shindo is a prominent inventor based in Saitama, Japan. He has made significant contributions to the field of materials science, particularly in the development of magnetic thin films. With a total of nine patents to his name, Shindo's work has advanced the technology used in various applications.

Latest Patents

Shindo's latest patents include a Ni-Fe alloy sputtering target for forming magnetic thin films, as well as a method for manufacturing this sputtering target. The Ni-Fe alloy material he developed is suitable for creating ferromagnetic thin films. This magnetic thin film is notable for producing a minimal number of particles during the sputtering process, while also excelling in corrosion resistance and magnetic properties. The sputtering target is characterized by having an oxygen content of 50 ppm or less, an S content of 10 ppm or less, a carbon content of 50 ppm or less, and a total content of metal impurities other than the alloy components of 50 ppm or less. The production process involves melting and alloying high-purity materials obtained through hydrochloric acid dissolution, followed by ion exchange, activated-charcoal treatment, and electrolytic refining.

Career Highlights

Yuichiro Shindo is currently employed at Japan Energy Corporation, where he continues to innovate in the field of materials science. His work has been instrumental in enhancing the performance and quality of magnetic thin films, which are critical in various technological applications.

Collaborations

Shindo has collaborated with notable coworkers, including Tsuneo Suzuki and Ryo Suzuki. Their combined expertise has contributed to the successful development of advanced materials and technologies.

Conclusion

Yuichiro Shindo's contributions to the field of magnetic thin films and materials science are noteworthy. His innovative patents and ongoing work at Japan Energy Corporation highlight his role as a leading inventor in this specialized area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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