Matsumoto, Japan

Yuichi Harada

This inventor holds 1 USPTO granted patent and 6 published patent applications. Top assignee: Fuji Electric., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yuichi Harada. Retrieved from https://idiyas.com/inventor/yuichi-harada-bbn00x5n

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Yuichi Harada: Innovator in Semiconductor Technology

Introduction

Yuichi Harada is a prominent inventor based in Matsumoto, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Yuichi Harada holds 1 patent for a semiconductor device. This device includes a semiconductor substrate featuring a drift region of a first conductivity type. Additionally, it incorporates a buffer region of the same conductivity type, positioned between the drift region and the lower surface of the semiconductor substrate. This buffer region has a higher doping concentration than the drift region and contains two or more helium chemical concentration peaks arranged at different depths within the semiconductor substrate.

Career Highlights

Harada is currently employed at Fuji Electric, Ltd., where he continues to push the boundaries of semiconductor technology. His work is characterized by a commitment to innovation and excellence in engineering.

Conclusion

Yuichi Harada's contributions to semiconductor technology exemplify the spirit of innovation. His patent reflects a deep understanding of semiconductor design and its applications. His ongoing work at Fuji Electric, Ltd. positions him as a key player in the advancement of this critical technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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