This inventor holds 1 USPTO granted patent. Top assignee: Yangtze Memory Technologies., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Yugang Wu and Semiconductor Memory Technology.
Introduction
Yugang Wu is an inventor associated with Wuhan, China, and Yangtze Memory Technologies Co., Ltd. His work includes semiconductor and memory-system technology. The provided information lists 1 patent associated with him.
Latest Patents
Wu is named on the patent “Semiconductor device, memory system and fabrication method of a semiconductor device.” The invention describes a semiconductor device with a silicon contact structure, a metal silicide layer, and a bit line structure extending in a first direction. A sidewall structure covers the bit line and silicide layer’s opposing sides and extends over the corresponding sides of the silicon contact structure’s first end. The application presents this structure as part of a semiconductor device and memory system, alongside a method for fabricating the device.
Career Highlights
The available information connects Wu’s patent work with Yangtze Memory Technologies Co., Ltd., a company focused on memory technology. His listed invention concerns semiconductor-device structure and fabrication.
Collaborations
The provided data identifies Zhaoyun Tang and Zhi Zhang as Wu’s coworkers. It does not specify their roles in the patent or describe the nature of their collaboration.
Conclusion
Yugang Wu’s listed patent addresses structural features and fabrication of a semiconductor device for memory applications, reflecting his connection to semiconductor innovation at Yangtze Memory Technologies Co., Ltd.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile