The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Jul. 27, 2023
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Zhaoyun Tang, Wuhan, CN;

Zhi Zhang, Wuhan, CN;

Zhongwei Luo, Wuhan, CN;

Wenyu Hua, Wuhan, CN;

He Chen, Wuhan, CN;

Xing Zhang, Wuhan, CN;

Yugang Wu, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10B 12/482 (2023.02); H10B 12/02 (2023.02); H10B 12/315 (2023.02);
Abstract

Examples of the present application provide a semiconductor device, a memory system and a fabrication method of a semiconductor device. The semiconductor device includes: a silicon contact structure; a metal silicide layer on one side of the silicon contact structure; a bit line structure located on the side of the metal silicide layer away from the silicon contact structure and extending in a first direction; and a sidewall structure covering the opposite sides of the bit line structure and the opposite sides of the metal silicide layer in the first direction and extending further to cover the opposite sides, in the first direction, of the first end of the silicon contact structure proximate to the metal silicide layer.


Find Patent Forward Citations

Loading…