Wuhan, China

Xing Zhang

This inventor holds 1 USPTO granted patent. Top assignee: Yangtze Memory Technologies., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xing Zhang. Retrieved from https://idiyas.com/inventor/xing-zhang-mla90ful

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Inventor Profile: Xing Zhang

Introduction

Xing Zhang is an innovative inventor based in Wuhan, China. He is known for his work in the field of semiconductor devices. Although he currently holds no granted patents, his contributions to the industry are noteworthy.

Latest Patent Applications

Xing Zhang has submitted a patent application titled "SEMICONDUCTOR DEVICE, MEMORY SYSTEM AND FABRICATION METHOD OF A SEMICONDUCTOR DEVICE." This application outlines a semiconductor device that includes a silicon contact structure, a metal silicide layer on one side of the silicon contact structure, and a bit line structure extending in a first direction. The application also describes a sidewall structure that covers the opposite sides of the bit line structure and the metal silicide layer, extending further to cover the first end of the silicon contact structure.

Conclusion

Xing Zhang's work in semiconductor technology demonstrates his commitment to innovation in the field. His latest patent application reflects his potential to contribute significantly to advancements in memory systems and semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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