This inventor holds 1 USPTO granted patent. Top assignee: Yangtze Memory Technologies Co., Ltd.. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: Innovations of Inventor Yuan Yuan
Introduction
Yuan Yuan is a notable inventor based in Hubei, China. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique method that enhances the efficiency of semiconductor structures.
Latest Patents
Yuan Yuan holds a patent for a method titled "Method for removing sacrificial layers of a stack of a three-dimensional semiconductor structure in two steps." This method involves forming a stack of alternating insulating layers and sacrificial layers over a substrate. It includes the formation of a trench through the stack to uncover the substrate, exposing the lateral sides of the insulating and sacrificial layers. The process is executed in two distinct areas, allowing for the effective removal of sacrificial layers while maintaining the integrity of the semiconductor structure.
Career Highlights
Yuan Yuan is currently employed at Yangtze Memory Technologies Co., Ltd. His work at this company focuses on advancing semiconductor technologies. His innovative methods have the potential to significantly impact the efficiency and performance of semiconductor devices.
Conclusion
Yuan Yuan's contributions to semiconductor technology through his patented methods demonstrate his expertise and innovative spirit. His work continues to influence the field, paving the way for future advancements in semiconductor manufacturing.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile